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EMX1 PDF预览

EMX1

更新时间: 2024-11-04 22:30:55
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管
页数 文件大小 规格书
4页 92K
描述
General purpose transistors (dual transistors)

EMX1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.45
Is Samacsys:N最大集电极电流 (IC):0.15 A
最小直流电流增益 (hFE):120JESD-609代码:e2
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):260极性/信道类型:NPN
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EMX1 数据手册

 浏览型号EMX1的Datasheet PDF文件第2页浏览型号EMX1的Datasheet PDF文件第3页浏览型号EMX1的Datasheet PDF文件第4页 
EMX1 / UMX1N / IMX1  
Transistors  
General purpose transistors  
(dual transistors)  
EMX1 / UMX1N / IMX1  
!Features  
!External dimensions (Units : mm)  
1) Two 2SC2412K chips in a EMT or UMT or SMT  
package.  
EMX1  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
2) Mounting possible with EMT3 or UMT3 or SMT3  
automatic mounting machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.2  
1.6  
Each lead has same dimensions  
ROHM  
: EMT6  
4) Mounting cost and area can be cut in half.  
Abbreviated symbol : X1  
UMX1N  
!Structure  
Epitaxial planar type  
NPN silicon transistor  
1.25  
2.1  
0.1Min.  
!Equivalent circuit  
Each lead has same dimensions  
ROHM  
EIAJ  
:
UMT6  
:
SC-88  
EMX1 / UMX1N  
IMX1  
(3) (2) (1)  
(4) (5) (6)  
Abbreviated symbol : X1  
IMX1  
Tr1  
Tr1  
Tr2  
Tr2  
(4) (5) (6)  
(3) (2) (1)  
1.6  
2.8  
0.3to0.6  
The following characteristics apply to both Tr1 and Tr2.  
Each lead has same dimensions  
ROHM  
EIAJ  
:
SMT6  
:
SC-74  
!Absolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : X1  
Limits  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
V
V
V
CBO  
CEO  
EBO  
60  
50  
V
7
V
I
C
150  
mA  
1
2
EMX1, UMX1N  
Power  
150 (TOTAL)  
300 (TOTAL)  
150  
P
C
mW  
dissipation  
IMX1  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55∼+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
1/3  

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