5秒后页面跳转
EMH1T2R PDF预览

EMH1T2R

更新时间: 2024-09-28 19:50:11
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 59K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6 PIN

EMH1T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-107
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.14其他特性:BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JESD-30 代码:R-PDSO-F6JESD-609代码:e2
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

EMH1T2R 数据手册

 浏览型号EMH1T2R的Datasheet PDF文件第2页浏览型号EMH1T2R的Datasheet PDF文件第3页 
EMH1 / UMH1N / IMH1A  
Transistors  
General purpose (dual digital transistors)  
EMH1 / UMH1N / IMH1A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC124E chips in a EMT or UMT or SMT  
package.  
UMH1N  
1.25  
2.1  
zCircuit schematic  
EMH1 / UMH1N  
IMH1A  
0.1Min.  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
R1  
R1  
R2  
R2  
ROHM  
EIAJ  
:
UMT6  
Each lead has same dimensions  
:
SC-88  
R2  
R2  
R1  
R1  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
IMH1A  
R1=  
R2=22KΩ  
R1=  
R2=22KΩ  
1.6  
2.8  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
0.3to0.6  
Supply voltage  
Input voltage  
VCC  
50  
40  
10  
30  
V
IN  
V
ROHM  
EIAJ  
:
SMT6  
Each lead has same dimensions  
:
SC-74  
Output current  
I
O
mA  
mA  
Collector current  
I
C(MAX)  
100  
EMH1 / UMH1N  
IMH1A  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Power dissipation  
Pd  
mW  
EMH1  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
( )  
3
( )  
2
( )  
1
(
)
4
)
5
)
6
Tstg  
55 to +150  
(
(
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
1.2  
1.6  
zPackage, marking, and packaging specifications  
Type  
Package  
EMH1  
EMT5  
H1  
UMH1N  
UMT6  
H1  
IMH1A  
SMT6  
H1  
Each lead has same dimensions  
ROHM  
: EMT6  
Marking  
Code  
T2R  
TN  
T110  
3000  
Basic ordering unit (pieces)  
8000  
3000  
Rev.A  
1/2  

EMH1T2R 替代型号

型号 品牌 替代类型 描述 数据表
EMG1T2R ROHM

功能相似

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5,
EMG1 ROHM

功能相似

General purpose (dual digital transistors)
DDC124EH-7 DIODES

功能相似

NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR

与EMH1T2R相关器件

型号 品牌 获取价格 描述 数据表
EMH1VM101FB0D00* AISHI

获取价格

Electrolytic SMD
EMH1VM221GB0D00* AISHI

获取价格

Electrolytic SMD
EMH1VM330E83D00* AISHI

获取价格

Electrolytic SMD
EMH1VM331WE0D00* AISHI

获取价格

Electrolytic SMD
EMH1VM470E83D00* AISHI

获取价格

Electrolytic SMD
EMH1VM471WG5D00* AISHI

获取价格

Electrolytic SMD
EMH2 HTSEMI

获取价格

General purpose transistors (dual transistors)
EMH2 ROHM

获取价格

General purpose (dual digital transistors)
EMH2 CJ

获取价格

SOT-563
EMH2 BL Galaxy Electrical

获取价格

50V,30mA,NPN Bipolar Digital Transistor