是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-107 |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 13 weeks |
风险等级: | 1.14 | 其他特性: | BUILT IN BIAS RESISTOR RATIO 1 |
最大集电极电流 (IC): | 0.03 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 56 |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e2 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
EMG1T2R | ROHM |
功能相似 |
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, | |
EMG1 | ROHM |
功能相似 |
General purpose (dual digital transistors) | |
DDC124EH-7 | DIODES |
功能相似 |
NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EMH1VM101FB0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH1VM221GB0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH1VM330E83D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH1VM331WE0D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH1VM470E83D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH1VM471WG5D00* | AISHI |
获取价格 |
Electrolytic SMD | |
EMH2 | HTSEMI |
获取价格 |
General purpose transistors (dual transistors) | |
EMH2 | ROHM |
获取价格 |
General purpose (dual digital transistors) | |
EMH2 | CJ |
获取价格 |
SOT-563 | |
EMH2 | BL Galaxy Electrical |
获取价格 |
50V,30mA,NPN Bipolar Digital Transistor |