Datasheet > EMB06N06VS

EMB06N06VS

更新时间： 2024-11-21 17:15:35

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	851K
描述
EDFN3X3

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中文翻译

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EMB06N06VS 数据手册

EMB06N06VS

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

5.2mΩ

7.5mΩ

50A

RDSON (MAX.) @V_GS=10V

RDSON (MAX.) @V_GS=4.5V

ID@T_C=25°C

Single N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNIT

V_GS

T_C= 25 °C

T_A= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

E_AS

Avalanche Current

L = 0.1mH

Avalanche Energy

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 100 °C

8.3

2.5

Power Dissipation

P_D

°C

1.0

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

°C / W

Junction-to-Ambient³

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³50°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/9/2

p.1

12 3 4 5 6

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