Datasheet > EGP10CE3

EGP10CE3

更新时间： 2024-02-21 05:51:56

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
2页	180K
描述
Rectifier Diode, 1 Element, 1A, 150V V(RRM)

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中文翻译

获取价格

技术参数
数据手册

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EGP10CE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.95 V	最大非重复峰值正向电流：	30 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	1 A	最大重复峰值反向电压：	150 V
最大反向恢复时间：	0.05 µs	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

EGP10CE3 数据手册

EGP10A thru EGP10G

Glass Passivated Junction Fast Efficient Rectifiers

Reverse Voltage 50 to 400 Volts Forward Current 1.0 Ampere

Features

Cavity-free glass-passivated junction

Ultrafast reverse recovery time

Low forward voltage drop

Low leakage current

Low switching losses, high efficiency

High forward surge capability

Solder Dip 260 °C, 40 seconds

Mechanical Data

Case: DO-204AL, molded epoxy over glass body Epoxy meets

UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per J-STD-002B

and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high reliability

grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

Weight: 0.012 ounce, 0.34 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

EGP

10A

EGP

10B

EGP

10C

EGP

10D

EGP

10F

EGP

10G

Parameter

Symbol

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55^oC

I_F(AV)

1.0

Amp

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

V_F

I_R

30.0

Amps

Volts

Maximum instantaneous forward voltage at 1.0A

0.95

22.0

1.25

15.0

Maximum DC reverse current

at rated DC blocking voltage

@T_A=25^oC

5.0

100

@T_A=125^oC

Maximum reverse recovery time at I_F= 0.5 A, I_R= 1.0 A,

_rr= 0.25 A

t_rr

^oC/W

^oC

Typical junction capacitance at 4.0 V, 1 MHz

Typical thermal resistance (Note 1)

C_J

R_θJA

50.0

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

Notes:

1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length

2. Pulse test: 300us pulse width, 1% duty cycle

159

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