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EGP10CE3 PDF预览

EGP10CE3

更新时间: 2024-11-21 15:31:31
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
2页 180K
描述
Rectifier Diode, 1 Element, 1A, 150V V(RRM)

EGP10CE3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.75
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:150 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NOBase Number Matches:1

EGP10CE3 数据手册

 浏览型号EGP10CE3的Datasheet PDF文件第2页 
EGP10A thru EGP10G  
Glass Passivated Junction Fast Efficient Rectifiers  
Reverse Voltage 50 to 400 Volts Forward Current 1.0 Ampere  
Features  
‹ Cavity-free glass-passivated junction  
‹ Ultrafast reverse recovery time  
‹ Low forward voltage drop  
‹ Low leakage current  
‹ Low switching losses, high efficiency  
‹ High forward surge capability  
‹ Solder Dip 260 °C, 40 seconds  
Mechanical Data  
‹ Case: DO-204AL, molded epoxy over glass body Epoxy meets  
UL-94V-0 Flammability rating  
‹ Terminals: Matte tin plated leads, solderable per J-STD-002B  
and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high reliability  
grade (AEC Q101 qualified)  
‹ Polarity: Color band denotes cathode end  
‹ Weight: 0.012 ounce, 0.34 gram  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
EGP  
10A  
EGP  
10B  
EGP  
10C  
EGP  
10D  
EGP  
10F  
EGP  
10G  
Parameter  
Symbol  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Volts  
Volts  
Volts  
70  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA=55oC  
IF(AV)  
1.0  
Amp  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
30.0  
Amps  
Volts  
uA  
Maximum instantaneous forward voltage at 1.0A  
0.95  
22.0  
1.25  
15.0  
Maximum DC reverse current  
at rated DC blocking voltage  
@TA=25oC  
5.0  
100  
@TA=125oC  
Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A,  
rr = 0.25 A  
nS  
trr  
50  
I
pF  
oC/W  
oC  
Typical junction capacitance at 4.0 V, 1 MHz  
Typical thermal resistance (Note 1)  
CJ  
RθJA  
50.0  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Notes:  
1. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length  
2. Pulse test: 300us pulse width, 1% duty cycle  
159  

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