Datasheet > EDI88512CA25RJMG

EDI88512CA25RJMG

更新时间： 2024-11-03 15:40:15

品牌	Logo	应用领域
WEDC		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
8页	314K
描述
Standard SRAM, 512KX8, 25ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, SOJ-36

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中文翻译

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EDI88512CA25RJMG 数据手册

EDI88512CA-XMXG

WPS512K8X-XRJXG

White Electronic Designs

512Kx8 Plastic Monolithic SRAM CMOS

WEDC's ruggedized plastic 512Kx8 SRAM that allows

the user to capitalize on the cost advantage of using a

plastic component while not sacriﬁcing all of the reliability

available in a full military device.

FEATURES

■

512Kx8 bit CMOS Static

■

Random Access Memory

Extended temperature testing is performed with the test

patterns developed for use on WEDC’s fully compliant

512Kx8 SRAMs. WEDC fully characterizes devices

to determine the proper test patterns for testing at

temperature extremes. This is critical because the

operating characteristics of device change when it is

operated beyond the commercial guarantee a device that

operates reliably in the ﬁeld at temperature extremes.

Users of WEDC’s ruggedized plastic beneﬁt from WEDC’s

extensive experience in characterizing SRAMs for use in

military systems.

• Access Times of 17, 20, 25ns

• Data Retention Function (LPA version)

• Extended Temperature Testing

• Data Retention Functionality Testing

36 lead JEDEC Approved Revolutionary Pinout

• Plastic SOJ (Package 319)

■

Single +5V (±10%) Supply Operation

RoHS compliant

WEDC ensures Low Power devices will retain data in Data

Retention mode by characterizing the devices to determine

the appropriate test conditions. This is crucial for systems

operating at -40°C or below and using dense memories

such as 512Kx8s.

WEDC’s ruggedized plastic SOJ is footprint compatible

with WEDC’s full military ceramic 36 pin SOJ.

FIG. 1 – PIN CONFIGURATION

PIN Description

TOP VIEW

I/O0-7

Data Inputs/Outputs

Address Inputs

Write Enables

Chip Selects

A^0-18

WE#

CS#

OE#

V^CC

36 NC

35 A18

34 A17

33 A16

32 A15

31 OE#

30 I/O7

29 I/O6

28 VSS

27 VCC

26 I/O5

25 I/O4

24 A14

23 A13

22 A12

21 A11

20 A10

19 NC

CS#

I/O0

I/O1

VCC

Output Enable

Power (+5V ±10%)

Ground

BLOCK DIAGRAM

36pin

V^SS

VSS 10

I/O2 11

I/O3 12

WE# 13

A5 14

Revolutionary

Not Connected

Memory Array

A6 15

A7 16

A8 17

Address

Buffer

Address

Decoder

I/O

Ø-18

I/OØ-7

Circuits

A9 18

WE#

CS#

OE#

December 2008

Rev. 7

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7 8

中文翻译

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与EDI88512CA25RJMG相关器件

型号	品牌	获取价格	描述	数据表
EDI88512CA-25RJMG	MICROSEMI	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
EDI88512CA25TB	MICROSEMI	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA25TB	MERCURY	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA25TC	ETC	获取价格	x8 SRAM
EDI88512CA25TI	MERCURY	获取价格	Standard SRAM, 512KX8, 25ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88512CA25TM	ETC	获取价格	x8 SRAM
EDI88512CA35B32B	MICROSEMI	获取价格	Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA35B32C	ETC	获取价格	x8 SRAM
EDI88512CA35B32I	MICROSEMI	获取价格	Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, DFP-32
EDI88512CA35B32M	MICROSEMI	获取价格	Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, DFP-32

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