是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DFP |
包装说明: | CERAMIC, DFP-32 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.02 |
最长访问时间: | 35 ns | 其他特性: | TTL COMPATIBLE INPUTS/OUTPUTS; LG-MAX |
JESD-30 代码: | R-CDFP-F32 | 长度: | 21.2852 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DFP | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 2.8448 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | FLAT |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.7442 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA35F32M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDFP32, CERAMIC, DFP-32 | |
EDI88512CA35F36B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA35F36C | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35F36I | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35F36M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDFP36, CERAMIC, DFP-36 | |
EDI88512CA35KB | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA35KC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA35KI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 | |
EDI88512CA35KM | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35N36B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, SOJ-36 |