是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | SOJ |
包装说明: | CERAMIC, SOJ-36 | 针数: | 36 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.02 |
Is Samacsys: | N | 最长访问时间: | 35 ns |
其他特性: | TTL COMPATIBLE INPUTS/OUTPUTS | JESD-30 代码: | R-CDSO-J36 |
长度: | 23.622 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 36 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 512KX8 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | SOJ |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 3.937 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 11.1506 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA35NB | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32 | |
EDI88512CA35NC | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35NI | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35NM | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35TB | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA35TB | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA35TC | ETC |
获取价格 |
x8 SRAM | |
EDI88512CA35TI | MERCURY |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA35TI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88512CA35TM | ETC |
获取价格 |
x8 SRAM |