是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | CERAMIC, DFP-32 | Reach Compliance Code: | unknown |
风险等级: | 5.63 | Is Samacsys: | N |
最长访问时间: | 35 ns | 其他特性: | TTL COMPATIBLE INPUTS/OUTPUTS |
I/O 类型: | COMMON | JESD-30 代码: | R-CDFP-F32 |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DFP |
封装等效代码: | FL32,.4 | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 2.8448 mm |
最大待机电流: | 0.025 A | 最小待机电流: | 4.5 V |
子类别: | SRAMs | 最大压摆率: | 0.225 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | FLAT | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.7442 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88512CA35F36B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDFP36, CERAMIC, DFP-36 |
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EDI88512CA35F36C | ETC |
获取价格 |
x8 SRAM |
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EDI88512CA35F36I | ETC |
获取价格 |
x8 SRAM |
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EDI88512CA35F36M | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDFP36, CERAMIC, DFP-36 |
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EDI88512CA35KB | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 |
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EDI88512CA35KC | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 |
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EDI88512CA35KI | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, LCC-36 |
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EDI88512CA35KM | ETC |
获取价格 |
x8 SRAM |
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EDI88512CA35N36B | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, SOJ-36 |
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EDI88512CA35N36C | MICROSEMI |
获取价格 |
Standard SRAM, 512KX8, 35ns, CMOS, CDSO36, CERAMIC, SOJ-36 |
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