Datasheet > EDF1CM-E3

EDF1CM-E3

更新时间： 2024-09-20 03:22:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	177K
描述
DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode

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中文翻译

获取价格

数据手册

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EDF1CM-E3 数据手册

EDF1AM thru EDF1DM

Vishay General Semiconductor

Miniature Glass Passivated Ultrafast Bridge Rectifier

Case Style DFM

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1 A

50 V to 200 V

50 A

5 µA

V_F

1.05 V

t_rr

50 ns

T_jmax.

150 °C

Features

Mechanical Data

• UL Recognition, file number E54214

Case: DFM

• Ideal for printed circuit boards

Epoxy meets UL-94V-0 Flammability rating

• Ultrafast reverse recovery time for high frequency

• Applicable for automative insertion

• High surge current capability

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

Polarity: As marked on body

• Solder Dip 260 °C, 40 seconds

Typical Applications

General purpose use in ac-to-dc bridge full wave rec-

tification for SMPS, Lighting Ballaster, Adapter, Bat-

tery Charger, Home Appliances, Office Equipment,

and Telecommunication applications

Maximum Ratings

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbol

EDF1AM

EDF1BM

100

EDF1CM

150

EDF1DM

200

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

Maximum RMS voltage

106

150

140

200

Maximum DC blocking voltage

100

Max. average forward output rectified current at T_A= 40 °C

I_F(AV)

I_FSM

1.0

Peak forward surge current single sine-wave superimposed

on rated load

I²t

A²sec

°C

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

T_J,T_STG

- 55 to + 150

Document Number 88577

08-Jul-05

www.vishay.com

12 3 4

中文翻译

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EDF1CM-E3/51	VISHAY	获取价格	DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectif
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