EDF1AS, EDF1BS, EDF1CS, EDF1DS
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• Ultrafast reverse recovery time for high
frequency
~
• High surge current capability
~
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
~
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFS
PRIMARY CHARACTERISTICS
Package
DFS
1 A
MECHANICAL DATA
IF(AV)
Case: DFS
VRRM
50 V, 100 V, 150 V, 200 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
IR
50 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 1.0 A
trr
1.05 V
50 ns
150 °C
Quad
TJ max.
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AS
EDF1BS EDF1CS EDF1DS
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
106
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
Maximum average forward output rectified current at TA = 40 °C (1)
100
IF(AV)
1.0
50
10
Peak forward surge current single half sine-wave superimposed on
rated load
IFSM
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
EDF1AS
EDF1BS EDF1CS EDF1DS
UNIT
Maximum instantaneous forward
voltage drop per diode
1.0 A (1)
VF
1.05
V
TA = 25 °C
5.0
1.0
μA
Maximum DC reverse current at rated
DC blocking voltage per diode
IR
trr
TA = 125 °C
mA
Maximum reverse recovery time per
diode
IF = 0.5 A, IR = 1.0 A,
50
ns
Irr = 0.25 A
Note
(1)
Pulse test: 300 ms pulse width, 1 % duty cycle
Revision: 19-Aug-13
Document Number: 88578
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000