Datasheet > EDF1CS-E3

EDF1CS-E3

更新时间： 2024-11-30 05:32:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	182K
描述
DIODE 1 A, 150 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode

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中文翻译

获取价格

数据手册

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EDF1CS-E3 数据手册

EDF1AS thru EDF1DS

New Product

Vishay General Semiconductor

Miniature Glass Passivated Ultrafast

Surface Mount Bridge Rectifiers

Case Style DFS

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1 A

50 V to 200 V

50 A

5 µA

V_F

1.05 V

t_rr

50 ns

T_jmax.

150 °C

Features

Mechanical Data

• UL Recognition, file number E54214

Case: DFS

• Ideal for automated placement

Epoxy meets UL-94V-0 Flammability rating

• Ultrafast reverse recovery time for high frequency

• High surge current capability

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

Polarity: As marked on body

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Typical Applications

General purpose use in ac-to-dc bridge full wave rec-

tification for SMPS, Lighting Ballaster, Adapter, Bat-

tery Charger, Home Appliances, Office Equipment,

and Telecommunication applications

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

V_RRM

EDF1AS

EDF1BS

100

EDF1CS

150

EDF1DS

200

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

106

150

140

200

Maximum DC blocking voltage

100

Maximum average forward output rectified

current at T_A= 40 °C⁽²⁾

I_F(AV)

1.0

Peak forward surge current single half sine-

wave superimposed on rated load

I_FSM

I²t

A²sec

°C

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature

range

T_J,T_STG

- 55 to + 150

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Test condition Symbol

V_F

EDF1AS

EDF1BS

EDF1CS

EDF1DS

Unit

at 1.0 A ⁽²⁾

Max. instantaneous forward

voltage drop per leg

1.05

Document Number 88578

12-Jul-05

www.vishay.com

12 3 4

中文翻译

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