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EDF1CS-E3/45 PDF预览

EDF1CS-E3/45

更新时间: 2024-11-29 14:49:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 88K
描述
Diode Rectifier Bridge Single 150V 1A 4-Pin Case DFS Tube

EDF1CS-E3/45 技术参数

是否无铅:不含铅生命周期:Active
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.51
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:150 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大重复峰值反向电压:150 V最大反向恢复时间:0.05 µs
子类别:Bridge Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

EDF1CS-E3/45 数据手册

 浏览型号EDF1CS-E3/45的Datasheet PDF文件第2页浏览型号EDF1CS-E3/45的Datasheet PDF文件第3页浏览型号EDF1CS-E3/45的Datasheet PDF文件第4页 
EDF1AS, EDF1BS, EDF1CS, EDF1DS  
www.vishay.com  
Vishay General Semiconductor  
Miniature Glass Passivated Ultrafast  
Surface Mount Bridge Rectifiers  
FEATURES  
• UL recognition, file number E54214  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
~
• Ultrafast reverse recovery time for high  
frequency  
~
• High surge current capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
~
~
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
Case Style DFS  
General purpose use in AC/DC bridge full wave rectification  
for SMPS, lighting ballaster, adapter, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
PRIMARY CHARACTERISTICS  
Package  
DFS  
1 A  
IF(AV)  
MECHANICAL DATA  
VRRM  
50 V, 100 V, 150 V, 200 V  
Case: DFS  
IFSM  
IR  
50 A  
5 μA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VF at IF = 1.0 A  
trr  
1.05 V  
50 ns  
150 °C  
Quad  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
Diode variations  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
106  
150  
200  
140  
200  
V
V
Maximum DC blocking voltage  
100  
V
Maximum average forward output rectified current at TA = 40 °C (1)  
Peak forward surge current single half sine-wave superimposed on rated load  
Rating for fusing (t < 8.3 ms)  
IF(AV)  
1.0  
50  
10  
A
IFSM  
I2t  
A
A2s  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Note  
(1)  
Pulse test: 300 ms pulse width, 1 % duty cycle  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL EDF1AS EDF1BS EDF1CS EDF1DS UNIT  
Maximum instantaneous forward voltage  
drop per diode  
1.0 A (1)  
VF  
1.05  
V
TA = 25 °C  
5.0  
1.0  
50  
μA  
mA  
ns  
Maximum DC reverse current at rated DC  
blocking voltage per diode  
IR  
trr  
TA = 125 °C  
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Note  
(1)  
Pulse test: 300 ms pulse width, 1 % duty cycle  
Revision: 25-Feb-16  
Document Number: 88578  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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