Datasheet > E50A21VBR

E50A21VBR

更新时间： 2024-11-04 22:06:59

品牌	Logo	应用领域
KEC		二极管电机 LTE
页数	文件大小	规格书
1页	197K
描述
STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

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中文翻译

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数据手册

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E50A21VBR 数据手册

SEMICONDUCTOR

E50A21VBS, E50A21VBR

STACK SILICON DIFFUSED DIODE

TECHNICAL DATA

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.

FEATURES

·Average Forward Current : I_O=50A.

·Zener Voltage : 21V(Typ.)

DIM MILLIMETERS

POLARITY

Φ11.5 MAX

Φ12.75+0.09-0.00

E50A21VBS (+ Type)

E50A21VBR (- Type)

Φ1.3 0.04

4.2+ 0.2

8.0+0.2

TYP 0.5

Φ10.0 0.2

0.4 0.1x45

8.5 MAX

0.2+0.1

28.35 0.5

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Average Forward Current

Peak 1 Cycle Surge Current

SYMBOL

I_F(AV)

RATING

UNIT

I_FSM

380 (60Hz)

Non-Repetitive Peak

Reverse Surge Current (10mS)

I_RSM

B-PF

V_RSM

V_RM

T_j

Transient Peak Reverse Voltage

Peak Reverse Voltage

Junction Temperature

-40∼215

℃

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Forward Voltage

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_F

V_Z

I_FM=100A

1.05

0.3

I_Z=10mA

V_R=18V

Zener Voltage

I_R

Reverse Current

μA

I_FM=100A, I_M=100mA, Pw=100mS

I_rsm=55A, Pw=10mS

I_Z=10mA

Transient Thermal Resistance

Breakdown Voltage

Temperature Coefficient

ΔV_F

V_br

15.7

mV/℃

Reverse Leakage Current Under

High Temperature

HI_R

R_th

Ta=150℃, V_R=18V

100

0.6

μA

Temperature Resistance

DC total junction to case

℃/W

2002. 4. 16

Revision No : 5

1/1

中文翻译

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