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E50A2CS PDF预览

E50A2CS

更新时间: 2024-11-13 06:55:11
品牌 Logo 应用领域
KEC 二极管
页数 文件大小 规格书
2页 52K
描述
STACK SILICON DIFFUSED DIODE

E50A2CS 技术参数

生命周期:Obsolete包装说明:R-XSSO-X1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XSSO-X1最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:1最高工作温度:190 °C
最低工作温度:-40 °C最大输出电流:50 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:15 µs
表面贴装:YES端子形式:UNSPECIFIED
端子位置:SINGLEBase Number Matches:1

E50A2CS 数据手册

 浏览型号E50A2CS的Datasheet PDF文件第2页 
SEMICONDUCTOR  
E50A2CS, E50A2CR  
STACK SILICON DIFFUSED DIODE  
TECHNICAL DATA  
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.  
A3  
A2  
A1  
D3  
FEATURES  
· Average Forward Current : IO=50A.  
· Repetitive Peak Reverse Voltage : VRRM=200V.  
POLARITY  
E50A2CS (+ Type)  
E50A2CR (- Type)  
E
F
G
DIM MILLIMETERS DIM MILLIMETERS  
MAXIMUM RATING (Ta=25)  
_
10.0+0.3  
_
+
A1  
A2  
A3  
B1  
B2  
C1  
C2  
D1  
D2  
D3  
E
5.0 0.3  
_
_
+
+
13.5 0.3  
4.5 0.3  
CHARACTERISTIC  
Repetitive Peak Reverse Voltage  
Average Forward Current  
Peak 1 Cycle Surge Current  
Junction Temperature  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
RATING  
200  
UNIT  
V
_
_
+
24.0 0.5  
_
+
1.9 0.3  
_
+
8.5 0.3  
_
+
9.0 0.3  
_
F
+
10.0 0.3  
_
+
1.0 0.3  
_
G
+
2.0 0.3  
+
4.4 0.5  
H
50  
A
_
_
+
0.6 0.3  
+
5.0 0.3  
_
T
+
2.5 0.3  
600 (50Hz)  
-40190  
-40150  
A
Tj  
MR  
Tstg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Peak Forward Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
1.05  
50  
UNIT  
V
VFM  
IRRM  
trr  
IFM=100A  
-
-
-
-
-
-
-
-
VRRM=200V  
Repetitive Peak Reverse Current  
Reverse Recovery Time  
μA  
IF=0.1A, IR=0.1A  
DC total junction to case  
15  
μS  
Rth  
Temperature Resistance  
1.0  
/W  
2010. 1. 28  
Revision No : 0  
1/2  

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