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E50A37VBR

更新时间: 2024-11-04 22:13:39
品牌 Logo 应用领域
KEC 二极管测试电机LTE
页数 文件大小 规格书
1页 67K
描述
STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

E50A37VBR 技术参数

生命周期:Obsolete包装说明:O-XUPF-P1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.84Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-XUPF-P1
元件数量:1端子数量:1
最高工作温度:215 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:PRESS FIT极性:UNIDIRECTIONAL
认证状态:Not Qualified标称参考电压:37 V
表面贴装:NO技术:ZENER
端子形式:PIN/PEG端子位置:UPPER
最大电压容差:8.11%工作测试电流:10 mA
Base Number Matches:1

E50A37VBR 数据手册

  
SEMICONDUCTOR  
E50A37VBS, E50A37VBR  
STACK SILICON DIFFUSED DIODE  
TECHNICAL DATA  
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.  
FEATURES  
A
Average Forward Current : IO=50A.  
Zener Voltage : 37V(Typ.)  
DIM MILLIMETERS  
POLARITY  
E50A37VBS (+ Type)  
A
B
C
D
E
F
G
H
I
Φ11.5 MAX  
Φ12.75+0.09-0.00  
_
+
Φ1.3 0.04  
_
4.2+ 0.2  
E50A37VBR (- Type)  
_
8.0+0.2  
K
TYP 0.5  
_
+
Φ10.0 0.2  
_
+
0.4 0.1x45  
8.5 MAX  
0.2+0.1  
_
+
28.35 0.5  
H
J
K
MAXIMUM RATING (Ta=25)  
I
E
D
J
CHARACTERISTIC  
Average Forward Current  
Peak 1 Cycle Surge Current  
SYMBOL  
IF(AV)  
RATING  
50  
UNIT  
A
F
G
B
IFSM  
300 (60Hz)  
A
Repetitive Peak  
Reverse Surge Current  
(Pulse width=10mS)  
IRSM  
50  
34  
A
V
B-PF  
Transient Peak Reverse  
Voltage  
VRSM  
VRM  
Tj  
Peak Reverse Voltage  
Junction Temperature  
Storage Temperature Range  
32  
V
-40215  
-40215  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC SYMBOL  
Forward Voltage  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VF  
VZ  
IFM=100A  
-
34  
-
-
37  
-
1.10  
40  
10  
60  
55  
-
V
V
IZ=10mA  
VR=32V  
Zener Voltage  
IR  
Reverse Current  
A  
IFM=100A, IM=100mA, Pw=100mS  
Irsm=50A, Pw=10mS  
IZ=10mA  
Transient Thermal Resistance  
Breakdown Voltage  
Temperature Coefficient  
VF  
Vbr  
-
-
mV  
V
-
-
T
-
27  
mV/ᴱ  
Reverse Leakage Current Under  
High Temperature  
HIR  
Rth  
Ta=150, VR=32V  
-
-
-
-
100  
0.6  
A  
Temperature Resistance  
DC total junction to case  
/W  
2002. 1. 30  
Revision No : 1  
1/1  

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