Datasheet > E50N06

E50N06

更新时间： 2024-11-05 03:32:39

品牌	Logo	应用领域
伊泰克 - ESTEK		/
页数	文件大小	规格书
2页	295K
描述
HEXFET Power MOSFET

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E50N06 数据手册

E 50N06

HEXFET^®Power MOSFET

ꢀ

Dynamic dv/dt Rating

175 ْC Operating Temperature

Fast switching

Ease of Paralleling

Simple Drive Requirements

V^DSS= 60V

I^D25= 50A

R^DS(ON)= 0.022Ω

Description

Third Generation HEXFETs from International Rectifier provide the designer

with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50watts. The low

thermal resistance and low package cost of the TO-220 contribute to its

wide acceptance throughout the industry.

Pin1–Gate

Pin2–Drain

Pin3–Source

Absolute Maximum Ratings

Parameter

Max.

50*

200

140

1.0

±20

100

4.5

Units

I^D@T^C=25 ْC

ID@TC=100ْC

IDM

Continuous Drain Current, V^GS@10V

Continuous Drain Current, VGS@10V

Pulsed Drain Current

Power Dissipation

①

PD@TC=25ْC

W/ ْC

V/ns

Linear Derating Factor

VGS

EAS

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

②

③

– 55 to +175

T^STG

Storage Temperature Range

ْC

Soldering Temperature, for 10 seconds

Mounting Torque,6-32 or M3 screw

300(1.6mm from case)

10 Ibf

●

in(1.1N●m)

Thermal Resistance

Parameter

Min.

Typ.

—

Max.

1.0

—

Units

RθJC

RθCS

RθJA

Junction-to-case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

—

ْC/W

0.50

—

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