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E50A2CPR

更新时间: 2024-11-14 01:18:47
品牌 Logo 应用领域
KEC 二极管
页数 文件大小 规格书
1页 351K
描述
STACK SILICON DIFFUSED DIODE

E50A2CPR 技术参数

生命周期:Obsolete包装说明:O-XUPF-P1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XUPF-P1最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:1最高工作温度:200 °C
最低工作温度:-40 °C最大输出电流:50 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:PRESS FIT认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:15 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:UPPERBase Number Matches:1

E50A2CPR 数据手册

  
SEMICONDUCTOR  
E50A2CPS, E50A2CPR  
STACK SILICON DIFFUSED DIODE  
TECHNICAL DATA  
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.  
F2  
D
FEATURES  
· Average Forward Current : IO=50A.  
· Reverse Voltage : 200V(Min.)  
E
F1  
POLARITY  
E50A2CPS (+ Type)  
E50A2CPR (- Type)  
A
DIM MILLIMETERS  
DIM MILLIMETERS  
Φ11.7+0.1/-0  
3.85+0/-0.2  
F1  
F2  
G
0.32  
3.1  
A
B
MAXIMUM RATING (Ta=25)  
_
0.5  
Φ1.45+ 0.1  
D
E
L1  
8.4 MAX  
1.55  
CHARACTERISTIC  
Average Forward Current  
Peak 1 Cycle Surge Current  
Repetitive Peak Reverse Voltage  
Junction Temperature  
SYMBOL  
F(AV)  
RATING  
50  
UNIT  
A
DIM TYPE POLARITY MILLIMETERS  
17.5+0/-1.5  
S
L2  
R
21.5+0/-1.5  
500 (60Hz)  
200  
A
VRRM  
Tj  
V
H-PF  
-420
-40200  
stg  
Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Forward Voltage  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
1.05  
-
UNIT  
V
VF  
VR  
IR  
IFM=100A  
-
200  
-
-
-
-
IR=5mA  
Reverse Voltage  
Reverse Current  
V
VR=200V  
50  
μA  
IFM=100A, IM=100mA,  
Pw=100ms  
VF  
trr  
Transient Thermal Resistance  
-
-
-
-
-
-
130  
15  
mV  
μs  
IF=100mA, IRP=100mA  
Reverse Recovery Time  
Reverse Leakage Current Under  
High Temperature  
HIR  
Ta=150, VR=200V  
2.5  
mA  
Junction to Base  
Junction to Fin  
-
-
-
-
0.8  
1.0  
Rth  
Temperature Resistance  
/W  
2005. 3. 7  
Revision No : 0  
1/1  

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