生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8532.25.00.70 | 风险等级: | 5.71 |
电容: | 5.6 µF | 电容器类型: | FILM CAPACITOR |
介电材料: | POLYESTER | 安装特点: | THROUGH HOLE MOUNT |
负容差: | 10% | 端子数量: | 2 |
最高工作温度: | 105 °C | 最低工作温度: | -40 °C |
封装形状: | RECTANGULAR PACKAGE | 包装方法: | TAPE |
正容差: | 10% | 额定(直流)电压(URdc): | 100 V |
表面贴装: | NO | 端子形状: | WIRE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTDE2G105K | CHEMI-CON |
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CAPACITOR, FILM/FOIL, POLYESTER, 400V, 1uF, THROUGH HOLE MOUNT, RADIAL LEADED | |
DTDG14 | ROHM |
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Digital transistor built in resistor and zener diode Driver 60V, 1A | |
DTDG14GP | ROHM |
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Digital transistor built in resistor and zener diode Driver 60V, 1A | |
DTDG14GPFRA | ROHM |
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DTDG14GPFRA是适合驱动器用途的车载型高可靠性晶体管。 | |
DTDG14GPFRAT100 | ROHM |
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Power Bipolar Transistor, | |
DTDG14GPP | ROHM |
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暂无描述 | |
DTDG14GPPT101 | ROHM |
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Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
DTDG14GPT100 | ROHM |
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1A / 60V Digital Transistor (with built-in resistor and zener diode) | |
DTDG23YP | ROHM |
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Digital transistor (built-in resistor) | |
DTDG23YP | TYSEMI |
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NPN Epitaxial Planar Silicon Transistor |