是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.68 | 其他特性: | DIGITAL, BUILT IN BIAS RESISTOR |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 300 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTDG14GPT100 | ROHM |
获取价格 |
1A / 60V Digital Transistor (with built-in resistor and zener diode) | |
DTDG23YP | ROHM |
获取价格 |
Digital transistor (built-in resistor) | |
DTDG23YP | TYSEMI |
获取价格 |
NPN Epitaxial Planar Silicon Transistor | |
DTDG23YP | KEXIN |
获取价格 |
Digital Transistors | |
DTDG23YP_1 | ROHM |
获取价格 |
1A / 60V Digital transistor (with built-in resistors and zener diode) | |
DTDG23YPFRA | ROHM |
获取价格 |
DTDG23YPFRA is the high reliability Automotive transistor, suitable for inverter and inter | |
DTDG23YPT101 | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
DTDK14GP | ETC |
获取价格 |
TRANSISTOR | 10V V(BR)CEO | 2A I(C) | SOT-89 | |
DTDK14GPT100 | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
DTDK14GPT101 | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |