DTDG14GPT100

更新时间： 2024-10-29 12:45:03

品牌	Logo	应用领域
罗姆 - ROHM		晶体二极管齐纳二极管数字晶体管
页数	文件大小	规格书
3页	56K
描述
1A / 60V Digital Transistor (with built-in resistor and zener diode)

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DTDG14GPT100 数据手册

DTDG14GP

Transistors

1A / 60V Digital Transistor

(with built-in resistor and zener diode)

DTDG14GP

zExternal dimensions (Unit : mm)

zApplications

Driver

4.5

1.6

1.5

zFeatures

1) High h^FE

300 (Min.) (V^CE/ I

2) Low saturation voltage,

(V^CE(sat)=0.4V at I / I =500mA / 5mA)

=2V / 0.5A)

(1)

(2)

(3)

0.4

0.5

3.0

0.4

1.5

3) Built-in zener diode gives strong protection against

reverse surge by L- load (an inductive load).

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

Abbreviated symbol : E01

zStructure

NPN epitaxial planar silicon transistor

(with built-in resistor and zener diode)

zEquivalent circuit

(2)

zPackaging specifications

(1)

Package

MPT3

Taping

T100

(3)

Packaging type

Code

R=10kΩ

(1) : Base

Basic ordering

unit (pieces)

(2) : Collector

(3) : Emitter

1000

Part No.

DTDG14GP

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

60 10

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

Collector current

∗1

∗2

0.5

Collector power dissipation

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗1 Pw

≤

10ms, Duty cycle

≤

1/2

∗2 When mounted on a 40

0.7 mm ceramic board.

Rev.A

1/2

12 3

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