Datasheet > DTDG23YP

DTDG23YP

更新时间： 2024-09-24 12:53:51

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
3页	221K
描述
NPN Epitaxial Planar Silicon Transistor

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中文翻译

获取价格

数据手册

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DTDG23YP 数据手册

SMD Type

Product specification

DTDG23YP

Features

NPN Epitaxial Planar Silicon Transistor

(with built-in resistors and zener diode).

High DC Current Gain.

Built-in Zener Diode Gives Strong Protection

Against Reverse Surge By L-load (an inductive load).

Absolute Maximum Ratings Ta = 25

Parameter

Supply Voltage

Symbol

V^CC

Rating

60 10

-6 to +40

Unit

Input Voltage

V^IN

I^C

Collector Current

I^CP*1

P^D*2

T^j

Power Dissipation

1.5

Junction temperature

Storage temperature

150

T^stg

-55 to +150

*1 Pw 10ms, Duty cycle 2%

*2 When mounted on 40x40x0.7mm ceramic board.

Electrical Characteristics Ta = 25

Parameter

Input Voltage

Symbol

Testconditons

V^CC= 5V , I^O= 100

V^O= 0.4V , I^O= 100mA

Min

Typ

Max

0.3

Unit

V^I(off)

V^I(on)

Output Voltage

V^O(on)I^O/I^I= 500mA/5mA

0.4

3.6

0.5

Input Current

I^I

I^O(off)

G^I

V^I= 5V

Output Current

V^CC= 40V , V^I= 0V

V^O= 2V , I^O= 500mA

DC Current Gain

300

1.54

Input Resistance

R¹

2.2

2.86

Emitter-base Resistance

Transistion Frequency

* Characteristics of built-in transistor

R²

fT *

VCE = 5V , IE = -0.1A , f = 30MHz

MHz

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