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DTDG23YP PDF预览

DTDG23YP

更新时间: 2024-10-29 12:53:51
品牌 Logo 应用领域
TYSEMI 晶体晶体管
页数 文件大小 规格书
3页 221K
描述
NPN Epitaxial Planar Silicon Transistor

DTDG23YP 数据手册

 浏览型号DTDG23YP的Datasheet PDF文件第2页浏览型号DTDG23YP的Datasheet PDF文件第3页 
Product specification  
DTDG23YP  
Features  
NPN Epitaxial Planar Silicon Transistor  
(with built-in resistors and zener diode).  
High DC Current Gain.  
Built-in Zener Diode Gives Strong Protection  
Against Reverse Surge By L-load (an inductive load).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Supply Voltage  
Symbol  
VCC  
Rating  
60 10  
-6 to +40  
1
Unit  
V
Input Voltage  
VIN  
V
IC  
Collector Current  
A
ICP *1  
PD *2  
Tj  
2
Power Dissipation  
1.5  
W
Junction temperature  
Storage temperature  
150  
Tstg  
-55 to +150  
*1 Pw 10ms, Duty cycle 2%  
*2 When mounted on 40x40x0.7mm ceramic board.  
Electrical Characteristics Ta = 25  
Parameter  
Input Voltage  
Symbol  
Testconditons  
VCC = 5V , IO = 100  
VO = 0.4V , IO = 100mA  
Min  
2
Typ  
Max  
0.3  
Unit  
V
VI(off)  
VI(on)  
A
Output Voltage  
VO(on) IO/II = 500mA/5mA  
0.4  
3.6  
0.5  
V
mA  
A
Input Current  
II  
IO(off)  
GI  
VI = 5V  
Output Current  
VCC = 40V , VI = 0V  
VO = 2V , IO = 500mA  
DC Current Gain  
300  
1.54  
7
Input Resistance  
R1  
2.2  
10  
80  
2.86  
13  
k
Emitter-base Resistance  
Transistion Frequency  
* Characteristics of built-in transistor  
R2  
k
fT *  
VCE = 5V , IE = -0.1A , f = 30MHz  
MHz  
http://www.twtysemi.com  
1of 3  
sales@twtysemi.com  
4008-318-123  

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