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DTC114EM PDF预览

DTC114EM

更新时间: 2024-11-01 12:26:15
品牌 Logo 应用领域
TSC 晶体信号二极管晶体管
页数 文件大小 规格书
3页 434K
描述
NPN Small Signal Transistor Small Signal Diode

DTC114EM 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

DTC114EM 数据手册

 浏览型号DTC114EM的Datasheet PDF文件第2页浏览型号DTC114EM的Datasheet PDF文件第3页 
DTC114 EM/EE/EUA/ECA/ESA  
NPN Small Signal Transistor  
Small Signal Diode  
Features  
—Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
—The bias resistors consist of thin -film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
—Only the on/off conditions need to be set for  
operation,marking device design easy.  
— Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information  
Part No.  
DTC114 EM  
DTC114 EE  
DTC114 EUA  
DTC114 ECA  
DTC114 ESA  
Packing  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
TO-92S  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
EUA ECA  
200  
50  
Type Number  
Power Dissipation  
Symbol  
Units  
EM  
ESA  
300  
EE  
150  
PD  
VCC  
VIN  
100  
mW  
V
Supply Voltage  
Input Voltage  
-1040  
50  
V
IO  
Output Current  
mA  
IC(MAX)  
100  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Symbol Min Typ  
Max  
Condtion  
Unit  
VCC=5V,IO=100μA  
VO=0.3V,IO=10mA  
IO/II=10mA/5mA  
VI(on)  
3
Input Voltage  
VI(off)  
0.5  
V
V
Output Voltage  
VO(on)  
0.3  
VI=5V  
Input Current  
II  
0.88  
mA  
VCC=50V,VI=0  
Output Current  
IOoff)  
0.5  
μA  
VO=5V,IO=5mA  
DC Current Gain  
Input Resistance  
GI  
30  
7
R1  
10  
1
13  
KΩ  
Resistance Ratio  
R2/R1  
fT  
0.8  
1.2  
VO=10V,IO=5mA,f=100MHz  
Transition Frequency  
250  
MHz  
Version:A12  

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