5秒后页面跳转
DTC114EM3 PDF预览

DTC114EM3

更新时间: 2024-11-26 12:50:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
12页 140K
描述
Digital Transistors (BRT) R1 = 10 k, R2 = 10 k

DTC114EM3 数据手册

 浏览型号DTC114EM3的Datasheet PDF文件第2页浏览型号DTC114EM3的Datasheet PDF文件第3页浏览型号DTC114EM3的Datasheet PDF文件第4页浏览型号DTC114EM3的Datasheet PDF文件第5页浏览型号DTC114EM3的Datasheet PDF文件第6页浏览型号DTC114EM3的Datasheet PDF文件第7页 
MUN2211, MMUN2211L,  
MUN5211, DTC114EE,  
DTC114EM3, NSBC114EF3  
Digital Transistors (BRT)  
R1 = 10 kW, R2 = 10 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
SC59  
CASE 318D  
STYLE 1  
XX MG  
Reduces Component Count  
G
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable  
1
SOT23  
CASE 318  
STYLE 6  
XXX MG  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC70/SOT323  
CASE 419  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 4  
DTC114E/D  

与DTC114EM3相关器件

型号 品牌 获取价格 描述 数据表
DTC114EM3/D ETC

获取价格

Digital Transistors
DTC114EM3T5G ONSEMI

获取价格

Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resis
DTC114EM3T5G_11 ONSEMI

获取价格

Digital Transistors
DTC114EMFHA ROHM

获取价格

车载数字晶体管
DTC114EMRS TSC

获取价格

NPN Small Signal Transistor
DTC114EMRSG TSC

获取价格

NPN Small Signal Transistor
DTC114EMT2L ROHM

获取价格

DTC114E series
DTC114EM-TP MCC

获取价格

Small Signal Bipolar Transistor,
DTC114EM-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
DTC114EN ETC

获取价格

TRANSISTOR | TO-92