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DTC114EMT2L PDF预览

DTC114EMT2L

更新时间: 2024-02-02 11:06:20
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
11页 571K
描述
DTC114E series

DTC114EMT2L 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-105
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.52Samacsys Confidence:4
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/244133.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=244133PCB Footprint:https://componentsearchengine.com/footprint.php?partID=244133
3D View:https://componentsearchengine.com/viewer/3D.php?partID=244133Samacsys PartID:244133
Samacsys Image:https://componentsearchengine.com/Images/9/DTC114EMT2L.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/DTC114EMT2L.jpg
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SO Transistor Flat LeadSamacsys Footprint Name:VMT3
Samacsys Released Date:2015-12-15 12:07:02Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTC114EMT2L 数据手册

 浏览型号DTC114EMT2L的Datasheet PDF文件第2页浏览型号DTC114EMT2L的Datasheet PDF文件第3页浏览型号DTC114EMT2L的Datasheet PDF文件第4页浏览型号DTC114EMT2L的Datasheet PDF文件第5页浏览型号DTC114EMT2L的Datasheet PDF文件第6页浏览型号DTC114EMT2L的Datasheet PDF文件第7页 
DTC114E series  
Datasheet  
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)  
lOutline  
VMT3  
EMT3F  
UMT3F  
SMT3  
Parameter  
VCC  
Value  
50V  
OUT  
OUT  
IN  
GND  
IN  
IC(MAX.)  
R1  
100mA  
10kW  
10kW  
GND  
DTC114EM  
(SC-105AA)  
DTC114EEB  
(SC-89)  
R2  
EMT3  
OUT  
OUT  
lFeatures  
1) Built-In Biasing Resistors, R1 = R2 = 10kW.  
IN  
IN  
GND  
GND  
2) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see inner circuit).  
DTC114EUB  
(SC-85)  
DTC114EE  
SOT-416 (SC-75A)  
UMT3  
3) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
completely eliminating parasitic effects.  
OUT  
OUT  
IN  
IN  
GND  
GND  
4) Only the on/off conditions need to be set for  
operation, making the circuit design easy.  
5) Complementary PNP Types :DTA114E series  
6) Complex transistors :EMH11 /UMH11N /IMH11A  
DTC114EKA  
SOT-346 (SC-59)  
DTC114EUA  
SOT-323 (SC-70)  
lInner circuit  
/EMG9 /UMG9N/ FMG9A NPN type)  
7) Lead Free/RoHS Compliant.  
lApplication  
Switching circuit, Inverter circuit, Interface circuit,  
Driver circuit  
lPackaging specifications  
Package  
size  
(mm)  
Basic  
ordering  
unit (pcs)  
Taping  
code  
Reel size Tape width  
Part No.  
Package  
Marking  
(mm)  
(mm)  
DTC114EM  
VMT3  
EMT3F  
EMT3  
1212  
1616  
1616  
2021  
2021  
2928  
T2L  
TL  
180  
180  
180  
180  
180  
180  
8
8
8
8
8
8
8,000  
3,000  
3,000  
3,000  
3,000  
3,000  
24  
24  
24  
24  
24  
24  
DTC114EEB  
DTC114EE  
TL  
DTC114EUB  
DTC114EUA  
DTC114EKA  
UMT3F  
UMT3  
SMT3  
TL  
T106  
T146  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.04 - Rev.A  
1/10  

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