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DTC114EM-TP-HF PDF预览

DTC114EM-TP-HF

更新时间: 2024-11-26 20:04:47
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
2页 258K
描述
Small Signal Bipolar Transistor,

DTC114EM-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.57
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC):0.1 A
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-F3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTC114EM-TP-HF 数据手册

 浏览型号DTC114EM-TP-HF的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTC114EM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epitaxial Planar Die Construction  
xꢀ  
xꢀ  
xꢀ  
·
Untrl Small Surface Mount Package  
Built-In Biasing Resistors  
Digital Transistors  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
Marking:24  
xꢀ  
·
Halogen free available upon request by adding suffix "-HF"  
Absolute maximum ratings @ 25  
SOT-723  
к
A
Symbol  
V
Parameter  
Min  
---  
---  
Typ  
50  
50  
---  
150  
150  
Max  
---  
100  
40  
---  
Unit  
V
mA  
Supply  
Voltage  
Collector current  
D
CC  
IC  
1.IN  
2.GND  
3
V
mW  
VIN  
Pd  
Tj  
Inputvoltage  
Power dissipation  
Junction temperature  
-10  
---  
3.OUT  
B
C
---  
---  
ć
ć
1
2
Tstg  
Storage temperature  
-55  
---  
150  
F
E
Electrical Characteristics @ 25  
к
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Parameter  
Min  
0.5  
---  
Typ  
---  
Max  
---  
Unit  
V
Input voltage (VCC=5V, IO=100 A)  
­
---  
3.0  
0.3  
0.88  
0.5  
---  
V
(V =0.3V, IO=10mA)  
O
G
Output voltage (IO=10mA,Ii=0.5mA)  
Input current (VI=5V)  
---  
---  
V
---  
---  
mA  
J
H
IO(off)  
GI  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=5mA)  
Input resistance  
---  
---  
A
­
DIMENSIONS  
30  
7
---  
R1  
10  
1.0  
13  
K
¡
INCHES  
MIN  
.045  
.045  
.030  
.011  
MM  
R2/R1  
Resistance ratio  
0.8  
0.2  
DIM  
A
MAX  
.049  
.049  
MIN  
1.15  
1.15  
MAX  
1.25  
1.25  
NOTE  
Transition frequency  
(VCE=10V, I E=5mA, f=100MHz)  
fT  
---  
250  
---  
MHz  
B
C
.033  
.015  
0.031TYP.  
0.75  
0.27  
0.85  
0.37  
D
E
F
G
H
J
0.80TYP.  
.007  
.011  
.020  
.006  
.002  
0.17  
0.43  
0.08  
0.00  
0.27  
0.50  
0.15  
0.05  
.017  
.003  
.000  
www.mccsemi.com  
Revision: A  
2014/05/12  
1 of 2  

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