Datasheet > DTC114EMRS

DTC114EMRS

更新时间： 2022-02-26 09:33:57

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
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描述
NPN Small Signal Transistor

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DTC114EMRS 数据手册

DTC114 EM/EE/EUA/ECA/ESA

Taiwan Semiconductor

Small Signal Product

NPN Small Signal Transistor

FEATURES

- Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit).

- The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

- Only the on/off conditions need to be set for

operation, marking device design easy.

- Packing code with suffix "G" means

green compound (halogen-free)

Equivalent Circuit

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

EUA / ECA

200

SYMBOL

UNIT

ESA

300

Power Dissipation

Supply Voltage

Input Voltage

P_D

V_CC

100

150

V_IN

-10 ～ +40

I_O

Output Current

°C

I_C(MAX)

T_J, T_STG

100

Junction and Storage Temperature Range

-55 to + 150

Notes: 1. Valid provided that electrodes are kept at ambient temperature

PARAMETER

CONDITION

V_CC=5V,I_O=100μA

V_O=0.3V,I_O=10mA

I_O/I_I=10mA/0.5mA

V_I=5V

SYMBOL

V_I(on)

V_I(off)

V_O(on)

I_I

MIN

TYP

MAX

UNIT

0.5

Input Voltage

Output Voltage

Input Current

0.3

0.88

0.5

μA

V_CC=50V,V_I=0

V_O=5V,I_O=5mA

Output Current

I_O（off)

G_I

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

R₁

1.2

KΩ

R₂/R₁

f_T

0.8

V_O=10V,I_O=5mA,f=100MHz

250

MHz

Document Number: DS_S1412029

Version: C14

12 3 4 5 6

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