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DTC114EM_14 PDF预览

DTC114EM_14

更新时间: 2024-11-27 00:50:59
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TSC /
页数 文件大小 规格书
6页 859K
描述
NPN Small Signal Transistor

DTC114EM_14 数据手册

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DTC114 EM/EE/EUA/ECA/ESA  
Taiwan Semiconductor  
Small Signal Product  
NPN Small Signal Transistor  
FEATURES  
- Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
- The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
- Only the on/off conditions need to be set for  
operation, marking device design easy.  
- Packing code with suffix "G" means  
green compound (halogen-free)  
Equivalent Circuit  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
EUA / ECA  
200  
SYMBOL  
UNIT  
EM  
EE  
ESA  
300  
Power Dissipation  
Supply Voltage  
Input Voltage  
PD  
VCC  
100  
150  
mW  
V
50  
VIN  
-10 +40  
50  
V
IO  
Output Current  
mA  
°C  
IC(MAX)  
TJ, TSTG  
100  
Junction and Storage Temperature Range  
-55 to + 150  
Notes: 1. Valid provided that electrodes are kept at ambient temperature  
PARAMETER  
CONDITION  
VCC=5V,IO=100μA  
VO=0.3V,IO=10mA  
IO/II=10mA/0.5mA  
VI=5V  
SYMBOL  
VI(on)  
VI(off)  
VO(on)  
II  
MIN  
TYP  
-
MAX  
3
UNIT  
-
0.5  
-
Input Voltage  
V
-
-
Output Voltage  
Input Current  
-
-
0.3  
0.88  
0.5  
-
V
-
mA  
μA  
VCC=50V,VI=0  
VO=5V,IO=5mA  
Output Current  
IOoff)  
GI  
-
-
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
30  
7
-
R1  
10  
1
13  
1.2  
-
KΩ  
R2/R1  
fT  
0.8  
-
VO=10V,IO=5mA,f=100MHz  
250  
MHz  
Document Number: DS_S1412029  
Version: C14  

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