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DSEP30-12A PDF预览

DSEP30-12A

更新时间: 2024-11-02 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管局域网
页数 文件大小 规格书
5页 161K
描述
HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEP30-12A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:compliant
风险等级:2.31其他特性:FREE WHEELING DIODE, SNUBBER DIODE, UL REGISTERED
应用:SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.66 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:165 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.04 µs子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEP30-12A 数据手册

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DSEP30-12A  
=
=
=
VRRM  
IFAV  
trr  
1200V  
30A  
HiPerFRED  
40ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DSEP30-12A  
Backside: cathode  
3
1
TO-247  
Features / Advantages:  
Applications:  
Package:  
● Planar passivated chips  
● Very low leakage current  
● Antiparallel diode for high frequency  
switching devices  
● Industry standard outline  
● RoHS compliant  
● Very short recovery time  
● Antisaturation diode  
● Epoxy meets UL 94V-0  
● Improved thermal behaviour  
● Very low Irm-values  
● Snubber diode  
● Free wheeling diode  
● Very soft recovery behaviour  
● Avalanche voltage rated for reliable operation  
● Soft reverse recovery for low EMI/RFI  
● Low Irm reduces:  
● Rectifiers in switch mode power  
supplies (SMPS)  
● Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20220610d  
© 2022 IXYS all rights reserved  

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