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DSEP60-06AT PDF预览

DSEP60-06AT

更新时间: 2024-11-17 22:22:07
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 43K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP60-06AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-268AA
包装说明:TO-268AA, 3 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.8
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.39 VJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大非重复峰值正向电流:600 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

DSEP60-06AT 数据手册

 浏览型号DSEP60-06AT的Datasheet PDF文件第2页 
DSEP 60-06A  
DSEP 60-06AT  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 60 A  
VRRM = 600 V  
trr = 35 ns  
TO-247 AD  
(A-Type)  
TO-268 AA  
(AT-Type)  
VRSM  
V
VRRM  
V
Type  
A
C
600  
600  
DSEP 60-06A  
DSEP 60-06AT  
A
C
A
A
C (TAB)  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
TVJ = TVJM  
Maximum Ratings  
IFRMS  
IFAVM  
70  
60  
A
A
TC = 110°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
600  
0.3  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive  
IAS = 1.6 A; L = 180 µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.2  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
mounting torque  
typical  
230  
0.8...1.2  
6
W
Nm  
g
Applications  
Md  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
650  
2.5  
mA  
mA  
VF  
IF = 60 A;  
TVJ = 150°C  
TVJ = 25°C  
1.39  
2.04  
V
V
RthJC  
RthCH  
0.65  
K/W  
K/W  
0.25  
35  
Advantages  
trr  
IF = 1 A; -di/dt = 300 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
EMI/RFI  
Low IRM reduces:  
IRM  
VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
8.3  
A
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
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