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DSEP8-12A PDF预览

DSEP8-12A

更新时间: 2024-11-17 22:22:07
品牌 Logo 应用领域
IXYS 整流二极管局域网
页数 文件大小 规格书
2页 39K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP8-12A 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:4.29其他特性:FREE WHEELING DIODE, SNUBBER DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.77 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:60 W认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEP8-12A 数据手册

 浏览型号DSEP8-12A的Datasheet PDF文件第2页 
DSEP 8-12A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 10 A  
VRRM = 1200 V  
trr = 40 ns  
TO-220 AC  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
1200  
1200  
DSEP 8-12A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
35  
10  
A
A
TC = 115°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
40  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive  
IAS = 8 A; L = 180 µH  
6.9  
mJ  
IAR  
VA = 1.25·VR typ.; f = 10 kHz; repetitive  
0.8  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
mounting torque  
typical  
60  
0.4...0.6  
2
W
Nm  
g
Applications  
Md  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
60  
0.25  
mA  
mA  
VF  
IF = 10 A;  
TVJ = 150°C  
TVJ = 25°C  
1.96  
2.94  
V
V
RthJC  
RthCH  
2.5  
K/W  
K/W  
0.5  
40  
Advantages  
trr  
IF = 1 A; -di/dt = 50 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
EMI/RFI  
Low IRM reduces:  
IRM  
VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
4
A
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

DSEP8-12A 替代型号

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