Datasheet > DSF01S30SL

DSF01S30SL

更新时间： 2024-11-19 14:58:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	150K
描述
30 V/0.1 A Schottky Barrier Diode, SOD-962(SL2)

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DSF01S30SL 数据手册

DSF01S30SL

Schottky Barrier Diode Silicon Epitaxial

DSF01S30SL

1. Applications

•

High-Speed Switching

2. Features

(1) Low forward voltage: VF = 0.41 V (typ.) @ IF = 100 mA

3. Packaging and Internal Circuit

1: Cathode

2: Anode

SL2

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

IFM

200

Peak forward current

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

(Note 1)

(Note 2)

100

IFSM

125



Storage temperature

Tstg

-55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Pad dimension of 645 mm2.

Note 2: Measured with a 10 ms pulse.

Start of commercial production

2015-06

2015-06-11

Rev.1.0

12 3 4 5

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