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DSEP8-03AS PDF预览

DSEP8-03AS

更新时间: 2024-02-12 14:32:44
品牌 Logo 应用领域
IXYS 整流二极管软恢复二极管
页数 文件大小 规格书
2页 50K
描述
HiPerFRED Epitaxial Diode with soft recovery

DSEP8-03AS 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW NOISE, FREE WHEELING DIODE, SNUBBER DIODE应用:SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.03 µs
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEP8-03AS 数据手册

 浏览型号DSEP8-03AS的Datasheet PDF文件第2页 
DSEP 8-03AS  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAVM = 8 A  
VRRM = 300 V  
trr = 30 ns  
TO-252AA (DPAK)  
C
A
VRSM VRRM  
Type  
Marking  
V
V
on product  
Anode  
Anode  
Cathode (Flange)  
300  
300  
DSEP 8-03AS  
8P030AS  
Symbol  
IFRMS  
Conditions  
Maximum Ratings  
Features  
• Planar passivated chips  
• Very short recovery time  
• Extremely low switching losses  
• Low IRM-values  
TVJ = TVJM  
TC = 152°C; rectangular, d = 0.5  
tP < 10 µs; rep. rating, pulse width limited by TVJM  
20  
8
A
A
A
IFAVM  
IFRM  
12  
IFSM  
EAS  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
60  
A
• Soft recovery behaviour  
TVJ = 25°C; non-repetitive  
IAS = 2 A; L = 180 µH  
0.5  
mJ  
Applications  
• Anti saturation diode  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.2  
A
• Snubber diode  
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
TVJ  
TVJM  
Tstg  
-40...+175  
175  
-40...+150  
°C  
°C  
°C  
• Inductive heating and melting  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Ptot  
TC = 25°C  
60  
W
g
Weight  
typ.  
0.3  
Advantages  
• High reliability circuit operation  
• Low voltage peaks for reduced  
protection circuits  
• Low noise switching  
• Low losses  
Symbol  
IR  
Conditions  
Characteristic Values  
typ. max.  
VR = VRRM; TVJ = 25°C  
VR = VRRM; TVJ = 150°C  
60  
µA  
0.25  
mA  
• Operating at lower temperature or  
space saving by reduced cooling  
VF  
IF = 8 A;  
TVJ = 150°C  
TVJ = 25°C  
1.13  
1.69  
V
V
RthJC  
2.5  
K/W  
Dimensions see Outlines.pdf  
trr  
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C  
30  
2
ns  
A
IRM  
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
2.4  
IFAVM rating includes reverse blocking losses  
at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2004 IXYS All rights reserved  
1 - 2  

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