DSEP8-12A
Pb
DSEP8-12A
Pb Free Plating Product
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
TO-220AC/TO-220C-2P
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics
· Low Recovery Loss
Base Backside
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
GENERAL DESCRIPTION
DSEP8-12A using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Test Conditions
Values
1200
1200
10
Unit
V
VR
VRRM
IF(AV)
IF(RMS)
IFSM
V
TC=110°C
A
TC=110°C
15
A
A
TJ=45°C, t=10ms, 50Hz, Sine
100
Non-Repetitive Surge Forward Current
Power Dissipation
PD
70
-40 to +150
-40 to +150
1.1
W
°C
TJ
Junction Temperature
TSTG
Torque
RθJC
Weight
Storage Temperature Range
Module-to-Sink
°C
Recommended(M3)
N·m
°C /W
g
Thermal Resistance
Junction-to-Case
1.8
2.2
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Unit
100
500
µA
VR=1200V
--
--
--
--
--
--
--
--
--
--
--
IRM
Reverse Leakage Current
µA
VR=1200V, TJ=125°C
IF=10A
2.4
1.85
22
--
--
--
--
--
--
--
V
V
VF
Forward Voltage
IF=10A, TJ=125°C
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
VR=600V, IF=10A
ns
ns
A
trr
Reverse Recovery Time
44
diF/dt=-200A/μs, TJ=25°C
IRRM
trr
Max. Reverse Recovery Current
Reverse Recovery Time
3.5
220
6.5
VR=600V, IF=10A
ns
A
diF/dt=-200A/μs, TJ=125°C
IRRM
Max. Reverse Recovery Current
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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