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DSEP29-06A PDF预览

DSEP29-06A

更新时间: 2024-02-25 02:33:47
品牌 Logo 应用领域
IXYS 整流二极管局域网软恢复二极管
页数 文件大小 规格书
3页 68K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP29-06A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:compliant
风险等级:5.69Is Samacsys:N
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.58 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:165 W认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEP29-06A 数据手册

 浏览型号DSEP29-06A的Datasheet PDF文件第2页浏览型号DSEP29-06A的Datasheet PDF文件第3页 
DSEP 29-06A DSEP 29-06AS  
DSEP 29-06B  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 30 A  
VRRM = 600 V  
trr  
= 30/35 ns  
TO-220 AC  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
C (TAB)  
C (TAB)  
600  
600  
600  
600  
600  
600  
DSEP 29-06A  
DSEP 29-06AS  
DSEP 29-06B  
TO-263  
A
A
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
International standard package  
• Planar passivated chips  
• Very short recovery time  
Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAVM  
35  
30  
30  
A
A
A
rect., d = 0.5; TC (Version A, AS)= 135°C  
TC (Version B) = 125°C  
l
IFSM  
EAS  
IAR  
TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A, AS) 250  
A
A
(Version B)  
200  
• Soft recovery behaviour  
• Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive  
IAS = 1.3 A; L = 180 µH  
0.2  
mJ  
Applications  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.1  
A
• Antiparallel diode for high frequency  
switching devices  
• Antisaturation diode  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
• Snubber diode  
Ptot  
TC = 25°C  
165  
0.4...0.6  
2
W
Nm  
g
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
Md  
mounting torque (Version A, B)  
typical  
Weight  
• Inductive heating  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Symbol  
Conditions  
Characteristic max. Values  
Version A  
Version B  
Advantages  
IR  
TVJ = 25°C;VR = VRRM  
TVJ = 150°C;VR = VRRM  
250  
1
250  
µA  
mA  
• Avalanche voltage rated for reliable  
operation  
• Soft reverse recovery for low  
EMI/RFI  
2
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
1.26  
1.61  
1.58  
2.52  
V
V
• Low IRM reduces:  
- Power dissipation within the diode  
- Turn-onlossinthecommutatingswitch  
RthJC  
RthCH  
0.9  
0.5  
0.9  
0.5  
K/W  
K/W  
typ.  
trr typ.  
IF = 1 A; -di/dt = 200 A/µs;  
VR = 30 V; TVJ = 25°C  
35  
30  
ns  
IRM typ.  
VR = 100 V; IF = 50 A;  
6
4
A
Dimensions see Outlines.pdf  
-diF/dt = 100 A/µs; TVJ = 100°C  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 3  

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