5秒后页面跳转
DSEP2X61-03A PDF预览

DSEP2X61-03A

更新时间: 2024-02-14 10:05:49
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 38K
描述
HiPerFRED Epitaxial Diode with soft recovery

DSEP2X61-03A 数据手册

 浏览型号DSEP2X61-03A的Datasheet PDF文件第2页 
DSEP 2x 61-03A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 2x 60 A  
VRRM = 300 V  
trr = 30 ns  
miniBLOC, SOT-227 B  
VRSM  
V
VRRM  
V
Type  
300  
300  
DSEP 2x 61-03A  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
100  
60  
A
A
TC = 75°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
600  
1.6  
A
International standard package  
TVJ = 25°C; non-repetitive  
IAS = 4 A; L = 180 µH  
mJ  
miniBLOC  
Isolation voltage 2500 V~  
UL registered E 72873  
2 independent FRED in 1 package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.4  
A
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
140  
W
VISOL  
50/60 Hz, RMS  
2500  
V~  
Soft recovery behaviour  
IISOL £ 1 mA  
Applications  
Md  
mounting torque (M4)  
terminal connection torque (M4)  
1.1-1.5/9-13  
1.1-1.5/9-13  
Nm/lb.in.  
Nm/lb.in.  
Antiparallel diode for high frequency  
Weight  
typical  
30  
g
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
0.65  
2.5  
mA  
mA  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
VF  
IF = 60 A;  
TVJ = 125°C  
TVJ = 25°C  
1.26  
1.68  
V
V
RthJC  
RthCH  
0.85  
K/W  
K/W  
Advantages  
0.1  
30  
trr  
IF = 1 A; -di/dt = 300 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
4.8  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

DSEP2X61-03A 替代型号

型号 品牌 替代类型 描述 数据表
STTH16003TV1 STMICROELECTRONICS

功能相似

HIGH FREQUENCY SECONDARY RECTIFIER
STTH12003TV1 STMICROELECTRONICS

功能相似

HIGH FREQUENCY SECONDARY RECTIFIER

与DSEP2X61-03A相关器件

型号 品牌 获取价格 描述 数据表
DSEP2X61-06A IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery
DSEP2X61-06A LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP2X61-12A IXYS

获取价格

HiPerFRED-TM Epitaxial Diode with soft recovery
DSEP2X61-12A LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP2X61-12B LITTELFUSE

获取价格

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 1200V V(RRM), Silicon,
DSEP2X91-03A IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery
DSEP2X91-03A LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP2X91-06A IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery
DSEP2X91-06A LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP30-03A IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery