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HFA30TA60C

更新时间： 2024-02-23 14:40:17
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
6页 205K
描述
Ultrafast Soft Recovery Diode, 2 x 15 A

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HFA30TA60C 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：R-PSSO-G2Reach Compliance Code：compliant
HTS代码：8541.10.00.80风险等级：5.12
Is Samacsys：N应用：GENERAL PURPOSE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.7 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3元件数量：1
相数：1端子数量：2
最大输出电流：30 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大反向电流：10 µA最大反向恢复时间：0.06 µs
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40Base Number Matches：1

HFA30TA60C 数据手册

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HFA30TA60C  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 15 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Guaranteed avalanche  
• Specified at operating conditions  
• Designed and qualified for industrial level  
Base  
common  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
2
Common  
cathode  
Anode  
Anode  
1
3
DESCRIPTION  
TO-220AB  
HFA30TA60C is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial construction  
and advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 15 A per leg continuous  
current, the HFA30TA60C is especially well suited for use as  
the companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the  
tb portion of recovery. The HEXFRED features combine to  
offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA30TA60C is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
600 V  
1.7 V  
VF at 15 A at 25 °C  
IF(AV)  
2 x 15 A  
19 ns  
trr (typical)  
TJ (maximum)  
Qrr (typical)  
150 °C  
80 nC  
dI(rec)M/dt (typical) at 125 °C  
160 A/µs  
4.0 A  
I
RRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
15  
Maximum continuous forward current  
IF  
TC = 100 °C  
30  
A
Single pulse forward current  
IFSM  
IFRM  
150  
Maximum repetitive forward current  
60  
TC = 25 °C  
74  
29  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 93091  
Revision: 29-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1
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