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DSEP29-03A PDF预览

DSEP29-03A

更新时间: 2024-11-02 09:57:03
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 40K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP29-03A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.79其他特性:SNUBBER DIODE, FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.71 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大功率耗散:170 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:35
Base Number Matches:1

DSEP29-03A 数据手册

 浏览型号DSEP29-03A的Datasheet PDF文件第2页 
DSEP 29-03A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 30 A  
VRRM = 300 V  
trr = 30 ns  
TO-220 AC  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
300  
300  
DSEP 29-03A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
35  
30  
A
A
TC = 145°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
300  
1.2  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive  
IAS = 3 A; L = 180 µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.3  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Ptot  
TC = 25°C  
mounting torque  
typical  
165  
0.4...0.6  
2
W
Nm  
g
Applications  
Md  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
250  
1
mA  
mA  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
0.93  
1.26  
V
V
RthJC  
RthCH  
0.9  
K/W  
K/W  
0.5  
30  
Advantages  
trr  
IF = 1 A; -di/dt = 200 A/ms;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
EMI/RFI  
Low IRM reduces:  
IRM  
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
7
A
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

DSEP29-03A 替代型号

型号 品牌 替代类型 描述 数据表
VS-30EPH03PBF VISHAY

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DIODE 30 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2
30EPH03PBF VISHAY

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Ultrafast Rectifier, 30 A FRED PtTM

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