5秒后页面跳转
DSEK60-12A PDF预览

DSEK60-12A

更新时间: 2024-09-08 21:54:43
品牌 Logo 应用领域
IXYS 整流二极管局域网快速恢复二极管
页数 文件大小 规格书
2页 50K
描述
Common Cathode Fast Recovery Epitaxial Diode (FRED)

DSEK60-12A 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:TO-247AD包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.53Is Samacsys:N
其他特性:HIGH RELIABILITY, LOW NOISE应用:FAST RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.55 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:26 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:125 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.04 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEK60-12A 数据手册

 浏览型号DSEK60-12A的Datasheet PDF文件第2页 
DSEK 60 IFAVM = 2x 26 A  
VRRM = 1200 V  
Common Cathode  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 40 ns  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
A
1200  
1200  
DSEK 60-12A  
A
C
A
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings  
Features  
International standard package  
TVJ = TVJM  
50  
26  
375  
A
A
A
IFAVM  
IFRM  
TC = 85°C; rectangular, d = 0.5  
tP < 10 ms; rep. rating, pulse width limited by TVJM  
JEDEC TO-247 AD  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behavior  
Epoxy meets UL 94V-0  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
200  
210  
A
A
t = 8.3 ms (60 Hz), sine  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
185  
195  
A
A
t = 8.3 ms (60 Hz), sine  
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
180  
A2s  
A2s  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
170  
160  
A2s  
A2s  
Applications  
t = 8.3 ms (60 Hz), sine  
Rectifiers in switch mode power  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
Ptot  
Md  
TC = 25°C  
125  
0.8...1.2  
6
W
Nm  
g
Mounting torque  
Advantages  
Weight  
Symbol  
IR  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Low noise switching  
Low losses  
Operating at lower temperature or  
space saving by reduced cooling  
Test Conditions  
Characteristic Values  
max.  
typ.  
TVJ = 25°C  
TVJ = 25°C  
VR = VRRM  
VR = 0.8 • VRRM  
750  
250  
7
mA  
mA  
mA  
TVJ = 125°C VR = 0.8 • VRRM  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
2.2  
2.55  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.65  
18.2  
V
mW  
RthJC  
RthCK  
RthJA  
0.9  
K/W  
K/W  
K/W  
0.25  
70  
60  
18  
trr  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C  
40  
16  
ns  
A
IRM  
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms  
L £ 0.05 mH; TVJ = 100°C  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2000 IXYS All rights reserved  
1 - 2  

DSEK60-12A 替代型号

型号 品牌 替代类型 描述 数据表
HFA32PA120CPBF VISHAY

功能相似

Ultrafast Soft Recovery Diode, 2 x 16 A

与DSEK60-12A相关器件

型号 品牌 获取价格 描述 数据表
DS-ELITE-1 RFSOLUTIONS

获取价格

Whatever your switching application the ELITE
DSEP IXYS

获取价格

HiPerFREDTM Epitaxial Diode with soft recovery
DSEP12-12A IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery
DSEP12-12A LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP12-12AZ IXYS

获取价格

暂无描述
DSEP12-12AZ LITTELFUSE

获取价格

HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP12-12AZ-TUB LITTELFUSE

获取价格

Rectifier Diode,
DSEP12-12B IXYS

获取价格

HiPerFRED Epitaxial Diode with soft recovery
DSEP12-12B LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEP12-12BZ LITTELFUSE

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-263AB, TO-263, D