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DSEP130-06A PDF预览

DSEP130-06A

更新时间: 2024-11-17 22:22:07
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
1页 19K
描述
HiPerFRED Epitaxial Diode with soft recovery

DSEP130-06A 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:R-PSFM-T2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76其他特性:SNUBBER DIODE, FREE WHEELING DIODE
应用:SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.63 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:1000 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:130 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEP130-06A 数据手册

  
Advanced Technical Information  
DSEP 130-06A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 130 A  
VRRM = 600 V  
trr = 35 ns  
TO-247 AD  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
600  
600  
DSEP130-06A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
Features  
• International standard package  
• Planar passivated chips  
• Very short recovery time  
• Extremely low switching losses  
• Low IRM-values  
IFRMS  
IFAVM  
70  
130  
A
A
TC = 70°C; rectangular, d = 0.5  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
1000  
0.4  
A
• Soft recovery behaviour  
• Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive  
IAS = 1.8 A; L = 180 µH  
mJ  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.2  
A
Applications  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
• Antiparallel diode for high frequency  
switching devices  
• Antisaturation diode  
Ptot  
TC = 25°C  
mounting torque  
typical  
375  
0.8...1.2  
6
W
Nm  
g
• Snubber diode  
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
Md  
Weight  
• Inductive heating  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Symbol  
Conditions  
Characteristic Values  
typ.  
max.  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
1000  
4
µA  
mA  
• Avalanche voltage rated for reliable  
operation  
• Soft reverse recovery for low  
EMI/RFI  
VF  
IF = 130 A; TVJ = 150°C  
TVJ = 25°C  
1.63  
2.26  
V
V
RthJC  
RthCH  
0.4  
K/W  
K/W  
• Low IRM reduces:  
0.25  
35  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
trr  
IF = 1 A; -di/dt = 400 A/µs;  
VR = 30 V; TVJ = 25°C  
ns  
IRM  
VR = 100 V; IF = 200 A; -diF /dt = 100 A/µs  
TVJ = 100°C  
8
10.2  
A
Dimensions see IXYS Databook 2001  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
IXYS Semiconductor GmbH  
1 - 1  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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