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DSEP15-06B PDF预览

DSEP15-06B

更新时间: 2024-11-17 22:22:07
品牌 Logo 应用领域
IXYS 整流二极管局域网软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
1页 341K
描述
HiPerFREDTM Epitaxial Diode with soft recovery

DSEP15-06B 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:3.85Is Samacsys:N
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.55 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:110 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DSEP15-06B 数据手册

  
DSEP 15-06B  
HiPerFREDTM Epitaxial Diode  
IFAV = 15 A  
VRRM = 600 V  
trr = 25 ns  
with soft recovery  
Preliminary data  
TO-220 AC  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
600  
600  
DSEP 15-06B  
C (TAB)  
D4  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
35  
15  
A
A
TC = 130°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
110  
A
G
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
Epoxy meets UL 94V-0  
TVJ = 25°C; non-repetitive; IAS = 1 A;  
L = 100 µH  
L = 20 mH  
G
0.1  
20  
mJ  
mJ  
G
G
G
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.1  
A
G
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
G
Applications  
Ptot  
TC = 25°C  
mounting torque  
typical  
95  
0.4...0.6  
2
W
Nm  
g
Md  
G
Antiparallel diode for high frequency  
Weight  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
G
G
G
Symbol  
Conditions  
Characteristic Values  
and motor control circuits  
Rectifiers in switch mode power  
G
typ.  
max.  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
x
y
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
100  
0.5  
µA  
G
mA  
G
G
VF  
IF = 15 A;  
TVJ = 150°C  
TVJ = 25°C  
1.55  
2.52  
V
V
RthJC  
RthCH  
1.6  
K/W  
K/W  
Advantages  
0.5  
25  
G
trr  
IF = 1 A; -di/dt = 100 A/µs;  
30  
ns  
Avalanche voltage rated for reliable  
VR = 30 V; TVJ = 25°C  
operation  
G
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
2.6  
A
EMI/RFI  
Low IRM reduces:  
G
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %  
y Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Dimensions see pages D4 - 85-86  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2001 IXYS All rights reserved  
1 - 1  

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