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DSEP12-12A PDF预览

DSEP12-12A

更新时间: 2024-09-10 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 163K
描述
HiperFRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

DSEP12-12A 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PSFM-T2Reach Compliance Code:compliant
风险等级:5.38Is Samacsys:N
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.65 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:90 W
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.04 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSEP12-12A 数据手册

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DSEP12-12A  
=
VRRM  
IFAV  
trr  
1200V  
12A  
HiPerFRED  
=
=
40ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DSEP12-12A  
Backside: cathode  
3
1
TO-220  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Antiparallel diode for high frequency  
switching devices  
Industry standard outline  
RoHS compliant  
Very short recovery time  
Antisaturation diode  
Epoxy meets UL 94V-0  
Improved thermal behaviour  
Very low Irm-values  
Snubber diode  
Free wheeling diode  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20200213d  
© 2020 IXYS all rights reserved  

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