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DS1350ABP-100+ PDF预览

DS1350ABP-100+

更新时间: 2024-11-30 19:12:07
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
12页 249K
描述
Non-Volatile SRAM Module, 512KX8, 100ns, CMOS, ROHS COMPLIANT, POWERCAP MODULE-34

DS1350ABP-100+ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DMA
包装说明:ROHS COMPLIANT, POWERCAP MODULE-34针数:34
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.69
最长访问时间:100 nsJESD-30 代码:R-XDMA-U34
JESD-609代码:e3内存密度:4194304 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
功能数量:1端子数量:34
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:UNSPECIFIED封装等效代码:MODULE,34LEAD,1.0
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
并行/串行:PARALLEL峰值回流温度(摄氏度):245
电源:5 V认证状态:Not Qualified
最大待机电流:0.0006 A子类别:SRAMs
最大压摆率:0.085 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:J INVERTED端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

DS1350ABP-100+ 数据手册

 浏览型号DS1350ABP-100+的Datasheet PDF文件第2页浏览型号DS1350ABP-100+的Datasheet PDF文件第3页浏览型号DS1350ABP-100+的Datasheet PDF文件第4页浏览型号DS1350ABP-100+的Datasheet PDF文件第5页浏览型号DS1350ABP-100+的Datasheet PDF文件第6页浏览型号DS1350ABP-100+的Datasheet PDF文件第7页 
DS1350W  
3.3V 4096k Nonvolatile SRAM  
with Battery Monitor  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
C 10 years minimum data retention in the  
absence of external power  
C Data is automatically protected during power  
loss  
BW  
A15  
A16  
RST  
VCC  
A18  
A17  
A14  
A13  
A12  
A11  
A10  
A9  
1
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
2
3
4
C Power supply monitor resets processor when  
5
V
CC power loss occurs and holds processor in  
WE  
6
OE  
7
reset during VCC ramp-up  
CE  
8
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ2  
DQ1  
DQ0  
GND  
A8  
9
C Battery monitor checks remaining capacity  
daily  
A7  
10  
11  
12  
13  
14  
15  
16  
17  
A6  
A5  
C Read and write access times as fast as 100ns  
C Unlimited write cycle endurance  
C Typical standby current 50 µA  
C Upgrade for 512k x 8 SRAM, EEPROM or  
Flash  
A4  
A3  
A2  
VBAT  
GND  
A1  
A0  
34-Pin PowerCap Module (PCM)  
(Uses DS9034PC PowerCap)  
C Lithium battery is electrically disconnected to  
retain freshness until power is applied for the  
first time  
PIN DESCRIPTION  
A0-A18  
DQ0-DQ7  
CE  
WE  
OE  
RST  
BW  
VCC  
GND  
NC  
- Address Inputs  
C Optional industrial temperature range of  
-40°C to +85°C, designated IND  
C PowerCap Module (PCM) package  
- Directly surface-mountable module  
- Replaceable snap-on PowerCap provides  
lithium backup battery  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Reset Output  
- Standardized pinout for all nonvolatile  
SRAM products  
- Battery Warning Output  
- Power (+3.3 Volts)  
- Ground  
- Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
- No Connect  
DESCRIPTION  
The DS1350W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM  
organized as 524,288 words by eight bits. Each NV SRAM has a self-contained lithium energy source  
and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a  
condition occurs, the lithium energy source is automatically switched on and write protection is  
unconditionally enabled to prevent data corruption. Additionally, the DS1350W has dedicated circuitry  
for monitoring the status of VCC and the status of the internal lithium battery. DS1350W devices in the  
PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC  
PowerCap to form a complete Nonvolatile SRAM module. The devices can be used in place of 512k x 8  
SRAM, EEPROM or Flash components.  
1 of 12  
103102  

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