是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.78 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 4.7 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DRA2L14Y0L | PANASONIC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236A | |
DRA2T | SANYO |
获取价格 |
2.0A Reverse Blocking Thyristor | |
DRA2TB | SANYO |
获取价格 |
2.0A Reverse Blocking Thyristor | |
DRA2TC | SANYO |
获取价格 |
2.0A Reverse Blocking Thyristor | |
DRA2TE | SANYO |
获取价格 |
2.0A Reverse Blocking Thyristor | |
DRA2TE | ONSEMI |
获取价格 |
SILICON CONTROLLED RECTIFIER,400V V(DRM),2A I(T),TO-202 | |
DRA2TG | SANYO |
获取价格 |
2.0A Reverse Blocking Thyristor | |
DRA2TG | ONSEMI |
获取价格 |
SILICON CONTROLLED RECTIFIER,600V V(DRM),2A I(T),TO-202 | |
DRA300_10 | CHINFA |
获取价格 |
AC - DC DIN RAIL MOUNTABLE POWER SUPPLY INDUSTRIAL CONTROL EQUIPMENT | |
DRA300-24A | CHINFA |
获取价格 |
AC - DC DIN RAIL MOUNTABLE 300W INDUSTRIAL CONTROL EQUIPMENT |