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DRA2TG PDF预览

DRA2TG

更新时间: 2024-09-16 22:26:39
品牌 Logo 应用领域
三洋 - SANYO 栅极
页数 文件大小 规格书
3页 91K
描述
2.0A Reverse Blocking Thyristor

DRA2TG 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
配置:SINGLE关态电压最小值的临界上升速率:15 V/us
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:0.8 V
最大维持电流:3 mAJEDEC-95代码:TO-202
JESD-30 代码:R-PSFM-T3最大漏电流:0.2 mA
通态非重复峰值电流:20 A元件数量:1
端子数量:3最大通态电流:2000 A
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:3.14 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:SCR
Base Number Matches:1

DRA2TG 数据手册

 浏览型号DRA2TG的Datasheet PDF文件第2页浏览型号DRA2TG的Datasheet PDF文件第3页 

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