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DRA3114T0L PDF预览

DRA3114T0L

更新时间： 2024-11-21 21:16:19
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 457K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN

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DRA3114T0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：7.81其他特性：BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：160
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DRA3114T0L 数据手册

 浏览型号DRA3114T0L的Datasheet PDF文件第2页浏览型号DRA3114T0L的Datasheet PDF文件第3页浏览型号DRA3114T0L的Datasheet PDF文件第4页 
Doc No. TT4-EA-11668  
Revision. 2  
Transistors with Built-in Resistor  
DRA3114T0L  
DRA3114T0L  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
Complementary to DRC3114T  
DRA9114T in SSSMini3 type package  
1.2  
0.3  
0.13  
3
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.2  
0.52  
Marking Symbol:  
Packaging  
LD  
(0.4) (0.4)  
0.8  
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SSSMini3-F2-B  
SC-105AA  
Absolute Maximum Ratings Ta = 25 C  
Code  
SOT-723  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Total power dissipation  
Junction temperature  
Symbol  
VCBO  
VCEO  
IC  
Rating  
-50  
-50  
-100  
100  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
PT  
Tj  
R1  
B
150  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
E
Resistance  
value  
10  
R1  
k  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
ICBO  
ICEO  
IEBO  
hFE  
Conditions  
Min Typ Max  
-50  
-50  
Unit  
V
V
μA  
μA  
mA  
-
V
V
V
k  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-0.01  
VCE = -10 V, IC = -5 mA  
160  
-1.2  
460  
-0.25  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
R1  
Input voltage  
-0.4  
Input resistance  
-30% 10 +30%  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2009-10-23  
Revised : 2014-02-07  
1234

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