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DRA2TE

更新时间: 2024-11-07 21:12:03
品牌 Logo 应用领域
安森美 - ONSEMI 栅极
页数 文件大小 规格书
1页 29K
描述
SILICON CONTROLLED RECTIFIER,400V V(DRM),2A I(T),TO-202

DRA2TE 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N关态电压最小值的临界上升速率:15 V/us
最大直流栅极触发电流:0.2 mA最大直流栅极触发电压:0.8 V
最大维持电流:3 mA最大漏电流:0.2 mA
通态非重复峰值电流:20 A最大通态电压:2 V
最大通态电流:2000 A最高工作温度:110 °C
最低工作温度:-40 °C断态重复峰值电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
触发设备类型:SCRBase Number Matches:1

DRA2TE 数据手册

  

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