Datasheet > DMP2004K

DMP2004K

更新时间： 2024-11-20 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	141K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMP2004K 数据手册

DMP2004K

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Low On-Resistance

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

Very Low Gate Threshold Voltage V_GS(TH)<1V

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Gate

•

"Green" Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Drain

SOT-23

Gate

Protection

Diode

Source

TOP VIEW

ESD protected

Equivalent Circuit

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

-20

Units

Gate-Source Voltage

±8

-600

-1.9

Drain Current (Note 1) V_GS= -4.5V

Pulsed Drain Current

I_DM

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

550

Units

P_D

Thermal Resistance, Junction to Ambient

227

°C/W

R_θ

Operating and Storage Temperature Range

-55 to +150

°C

_,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-20

⎯

BV_DSS

I_DSS

I_GSS

⎯

-1.0

V_GS= 0V, I_D= -250mA

V_DS= -20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

μA

±1.0

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

-0.5

-1.0

V_GS(th)

⎯

V_DS= V_GS, I_D= -250μA

_GS= -4.5V, I_D= -430mA

0.7

1.1

1.7

0.9

1.4

2.0

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

V_GS= -2.5V, I_D= -300mA

V_GS= -1.8V, I_D= -150mA

V_DS= -10V, I_D= -0.2A

V_GS= 0V, I_S= -115mA

Forward Transfer Admittance

Diode Forward Voltage (Note 4)

DYNAMIC CHARACTERISTICS

Input Capacitance

200

-0.5

|Y_fs|

V_SD

⎯

-1.2

175

C_iss

C_oss

C_rss

⎯

_DS= -16V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Short duration pulse test used to minimize self-heating effect.

1 of 5

www.diodes.com

June 2010

DMP2004K

Document number: DS30933 Rev. 4 - 2

12 3 4 5

中文翻译

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与DMP2004K相关器件

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DMP2004VK-7	DIODES	获取价格	DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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