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DMN55D0UT-7 PDF预览

DMN55D0UT-7

更新时间： 2024-11-29 09:54:15
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 173K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN55D0UT-7 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：18 weeks
风险等级：1.66其他特性：HIGH RELIABILITY
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：0.16 A最大漏极电流 (ID)：0.16 A
最大漏源导通电阻：4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.2 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICONBase Number Matches：1

DMN55D0UT-7 数据手册

 浏览型号DMN55D0UT-7的Datasheet PDF文件第2页浏览型号DMN55D0UT-7的Datasheet PDF文件第3页浏览型号DMN55D0UT-7的Datasheet PDF文件第4页 
DMN55D0UT  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
Low On-Resistance  
Very Low Gate Threshold Voltage  
Low Input Capacitance  
ESD Protected Gate to 2kV  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4)  
•
•
Case: SOT-523  
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 6. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.002 grams (approximate)  
Drain  
SOT-523  
D
Gate  
Gate  
TOP VIEW  
ESD PROTECTED, 2kV  
G
S
Protection  
Diode  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
50  
Units  
V
Gate-Source Voltage  
V
±12  
160  
560  
Drain Current (Note 1)  
Continuous  
mA  
mA  
Pulsed Drain Current (Note 1)  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Value  
200  
Units  
mW  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
50  
V
BVDSS  
IDSS  
⎯
⎯
⎯
10  
VGS = 0V, ID = 250μA  
⎯
μA VDS = 50V, VGS = 0V  
V
V
GS = ±8V, VDS = 0V  
GS = ±12V, VDS = 0V  
1.0  
5.0  
Gate-Body Leakage  
IGSS  
⎯
⎯
μA  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
0.7  
⎯
⎯
0.8  
3.1  
4
1.0  
4
V
Ω
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = 250μA  
VGS = 4V, ID = 100mA  
Static Drain-Source On-Resistance  
5
VGS = 2.5V, ID = 80mA  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
180  
mS  
⎯
⎯
VDS = 10V, ID = 100mA, f = 1.0KHz  
25  
5
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance  
pF VDS = 10V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
2.1  
Notes:  
1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 4  
www.diodes.com  
March 2008  
© Diodes Incorporated  
DMN55D0UT  
Document number: DS31330 Rev. 3 - 2  
1234

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