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DMA20201 PDF预览

DMA20201

更新时间: 2024-11-05 09:54:03
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 420K
描述
Silicon PNP epitaxial planar type

DMA20201 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:COMMON BASE, 2 ELEMENTS最小直流电流增益 (hFE):210
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz

DMA20201 数据手册

 浏览型号DMA20201的Datasheet PDF文件第2页浏览型号DMA20201的Datasheet PDF文件第3页浏览型号DMA20201的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA20201  
Silicon PNP epitaxial planar type  
For general amplication  
Features  
Package  
Contributes to miniaturization of sets, reduction of component count.  
Code  
Eco-friendly Halogen-free package  
Mini5-G3-B  
Pin Name  
1: Emitter (Tr1)  
Basic Part Number  
4: Collector (Tr2)  
Dual DSA2001 (Common Base)  
2: Base (Common) 5: Collector (Tr1)  
3: Emitter (Tr2)  
Packaging  
Marking Symbol: A5  
Internal Connection  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings T = 25°C  
a
(C1)  
5
(C2)  
4
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
–50  
V
Tr1  
Tr2  
–7  
V
–100  
–200  
300  
mA  
mA  
mW  
°C  
1
2
3
(E1) (B) (E2)  
Peak collector current  
ICP  
Total power dissipation  
PT  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 µA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
µA  
µA  
210  
hFE  
(Small/Large)  
hFE ratio *  
VCE = –10 V, IC = –2 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: February 2010  
ZJJ00532BED  
1

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