Datasheet > DMA20401

DMA20401

更新时间： 2024-11-05 09:54:03

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松下 - PANASONIC		/
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描述
Silicon PNP epitaxial planar type

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DMA20401 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DMA20401

Silicon PNP epitaxial planar type

For general ampliﬁcation

 Features

ꢀPackage

 Contributes to miniaturization of sets, reduction of component count.

ꢀCode

 Eco-friendly Halogen-free package

Mini6-G4-B

ꢀPin Name

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

ꢀBasic Part Number

4: Emitter (Tr2)

5: Base (Tr2)

Dual DSA2001 (Individual)

6: Collector (Tr1)

 Packaging

ꢀMarking Symbol: A7

ꢀInternal Connection

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

ꢀAbsolute Maximum Ratings T = 25°C

(C1) (B2) (E2)

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

–50

Tr1

Tr2

–7

–100

–200

300

°C

(E1) (B1) (C2)

Peak collector current

I_CP

Total power dissipation

P_T

Junction temperature

T_j

150

Storage temperature

stg

–55 to +150

°C

ꢀElectrical Characteristics T = 25°C±3°C

Parameter

Symbol

Conditions

Min

–60

–50

–7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

V_CBOI_C= –10 µA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 µA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= –20 V, I_E= 0

V_CE= –10 V, I_B= 0

V_CE= –10 V, I_C= –2 mA

– 0.1

–100

460

µA



210

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –100 mA, I_B= –10 mA

– 0.2

150

– 0.5

f_T

V_CE= –10 V, I_C= –2 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: February 2010

ZJJ00533BED

12 3 4

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